Datasheet > 40N06

40N06

更新时间： 2024-09-16 11:46:35

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40N06 数据手册

Wisdom ^{Semiconductor}

WFP 4 0N06

N-Channel MOSFET

Features

{

2. Drain

Symbol

■ R

(Max 28mΩ )@V =10V

DS(on)

■ Improved dv/dt Capability, High Ruggedness

●

■ 100% Avalanche Tested

◀

▲

■ Maximum Junction Temperature Range (150°C)

●

1. Gate

{

3. Source

{

General Description

TO-220

This Power MOSFET is produced using Wisdom’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high

rugged avalanche characteristics. These devices are well suited

for high efficiency switch mode power supplies, active power factor

correction, electronic lamp ballasts based on half bridge topology.

D S

Absolute Maximum Ratings Tc=25℃ unless other wise noted

Symbol

Parameter

Units

WFP40N06

V_DSS

Drain-Sourse Voltage

Drain Current

-continuous (Tc=25℃)

-continuous (Tc=100℃)

I_D

33.5

±25

115

V_GS

E_AS

Gate-Sourse Voltage

Single Plused Avanche Energy

Avalanche Current

(Note1)

(Note2)

I_AR

P_D

℃

Power Dissipation (Tc=25℃)

T_J,T_STG

Operating and Storage Temperature Range

-55 ~ +150

300

Maximum lead temperature for soldering

purpose,1/8” from case for 5 seconds

℃

Thermal Characteristics

Symbol

Parameter

Typ.

Max

Units

R_θJC

Thermal Resistance,Junction to Case

1.88

℃/W

12 3 4 5 6

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