Datasheet > 40MT120UHAPBF_13

40MT120UHAPBF_13

更新时间： 2024-11-02 12:52:27

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
12页	329K
描述
Half Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A

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数据手册

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40MT120UHAPBF_13 数据手册

40MT120UHAPbF, 40MT120UHTAPbF

Vishay High Power Products

"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A

FEATURES

• Ultrafast Non Punch Through (NPT) technology

• Positive V_CE(on)temperature coefficient

• 10 μs short circuit capability

• Square RBSOA

• HEXFRED^®antiparallel diodes with ultrasoft reverse

recovery and low V_F

• Al₂O₃DBC

• Optional SMD thermistor (NTC)

• Very low stray inductance design for high speed operation

MTP

• UL approved file E78996

• Speed 8 kHz to 60 kHz

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Optimized for welding, UPS and SMPS applications

PRODUCT SUMMARY

• Rugged with ultrafast performance

• Benchmark efficiency above 20 kHz

• Outstanding ZVS and hard switching operation

• Low EMI, requires less snubbing

V_CES

1200 V

3.36 V

80 A

V_CE(on)typical at V_GE= 15 V

I_Cat T_C= 25 °C

• Excellent current sharing in parallel operation

• Direct mounting to heatsink

• PCB solderable terminals

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

1200

UNITS

Collector to emitter breakdown voltage

V_CES

T_C= 25 °C

Continuous collector current

I_C

T_C= 104 °C

Pulsed collector current

I_CM

I_LM

160

Clamped inductive load current

Diode continuous forward current

Diode maximum forward current

Gate to emitter voltage

I_F

T_C= 105 °C

I_FM

160

V_GE

V_ISOL

RMS isolation voltage

Any terminal to case, t = 1 min

T_C= 25 °C

2500

463

185

Maximum power dissipation (only IGBT)

P_D

T_C= 100 °C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94507

Revision: 01-Mar-10

For technical questions, contact: indmodules@vishay.com

www.vishay.com

12 3 4 5 6 7...12

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