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40MT120UHAPBF PDF预览

40MT120UHAPBF

更新时间: 2024-11-02 07:47:35
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
12页 330K
描述
'Half Bridge' IGBT MTP (Ultrafast NPT IGBT), 80 A

40MT120UHAPBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-XUFM-X5
针数:12Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:20 weeks 1 day
风险等级:5.1Is Samacsys:N
其他特性:UL RECOGNIZED外壳连接:ISOLATED
最大集电极电流 (IC):80 A集电极-发射极最大电压:1200 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X5元件数量:2
端子数量:5最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):463 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
VCEsat-Max:4.91 VBase Number Matches:1

40MT120UHAPBF 数据手册

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40MT120UHAPbF, 40MT120UHTAPbF  
Vishay High Power Products  
"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A  
FEATURES  
• Ultrafast Non Punch Through (NPT) technology  
• Positive VCE(on) temperature coefficient  
• 10 μs short circuit capability  
• Square RBSOA  
• HEXFRED® antiparallel diodes with ultrasoft reverse  
recovery and low VF  
• Al2O3 DBC  
• Optional SMD thermistor (NTC)  
• Very low stray inductance design for high speed operation  
MTP  
• UL approved file E78996  
• Speed 8 kHz to 60 kHz  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
BENEFITS  
• Optimized for welding, UPS and SMPS applications  
PRODUCT SUMMARY  
• Rugged with ultrafast performance  
• Benchmark efficiency above 20 kHz  
• Outstanding ZVS and hard switching operation  
• Low EMI, requires less snubbing  
VCES  
1200 V  
3.36 V  
80 A  
VCE(on) typical at VGE = 15 V  
IC at TC = 25 °C  
• Excellent current sharing in parallel operation  
• Direct mounting to heatsink  
• PCB solderable terminals  
• Very low junction to case thermal resistance  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
1200  
80  
UNITS  
Collector to emitter breakdown voltage  
VCES  
V
TC = 25 °C  
Continuous collector current  
IC  
TC = 104 °C  
40  
Pulsed collector current  
ICM  
ILM  
160  
160  
21  
A
Clamped inductive load current  
Diode continuous forward current  
Diode maximum forward current  
Gate to emitter voltage  
IF  
TC = 105 °C  
IFM  
160  
20  
VGE  
VISOL  
V
RMS isolation voltage  
Any terminal to case, t = 1 min  
TC = 25 °C  
2500  
463  
185  
Maximum power dissipation (only IGBT)  
PD  
W
TC = 100 °C  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94507  
Revision: 01-Mar-10  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
1

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