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2STR1230 PDF预览

2STR1230

更新时间: 2024-11-20 02:57:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关小信号双极晶体管光电二极管PC
页数 文件大小 规格书
10页 195K
描述
Low voltage fast-switching NPN power transistor

2STR1230 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.79
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:179091Samacsys Pin Count:3
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23Samacsys Released Date:2015-05-24 21:47:42
Is Samacsys:N最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2STR1230 数据手册

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2STR1230  
Low voltage fast-switching NPN power transistor  
General features  
Very low collector-emitter saturation voltage  
High current gain characteristic  
Fast switching speed  
Miniature SOT-23 plastic package for surface  
mounting circuits  
In compliance with the 2002/93/EC European  
Directive  
SOT-23  
Description  
The device is a NPN transistor manufactured  
using new “PB-HCD” (Power Bipolar High Current  
Density) technology. The resulting transistor  
shows exceptional high gain performances  
coupled with very low saturation voltage.  
Internal schematic diagram  
The complementary PNP is the 2STR2230.  
Applications  
LED  
Motherboard & hard disk drive  
Mobile equipment  
Battery charger  
Voltage regulation  
Order codes  
Part Number  
Marking  
Package  
SOT-23  
Packing  
2STR1230  
130  
Tape & reel  
October 2006  
Rev 2  
1/10  
www.st.com  
10  

2STR1230 替代型号

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