Datasheet > 2STW1695_08

2STW1695_08

更新时间： 2024-10-14 06:16:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
9页	172K
描述
High power PNP epitaxial planar bipolar transistor

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2STW1695_08 数据手册

2STW1695

High power PNP epitaxial planar bipolar transistor

Features

■ High breakdown voltage V

= -140 V

CEO

■ Complementary to 2STW4468

■ Typical f = 20 MHz

■ Fully characterized at 125 C

Applications

■ Audio power amplifier

TO-247

Description

The device is a PNP transistor manufactured

using new BiT-LA (Bipolar transistor for linear

amplifier) technology. The resulting transistor

shows good gain linearity behaviour.

Figure 1.

Internal schematic diagram

Recommended for 70 W to 100 W high fidelity

audio frequency amplifier output stage.

Table 1.

Order code

2STW1695

Device summary

Marking

Package

TO-247

Packaging

2STW1695

Tube

October 2008

Rev 4

1/9

www.st.com

12 3 4 5 6 7...9

中文翻译

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