Datasheet > 2STW4468_08

2STW4468_08

更新时间： 2024-10-14 05:57:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
9页	163K
描述
High power NPN epitaxial planar bipolar transistor

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2STW4468_08 数据手册

2STW4468

High power NPN epitaxial planar bipolar transistor

Features

■ High breakdown voltage V

= 140 V

CEO

■ Complementary to 2STW1695

■ Fast-switching speed

■ Typical f = 20 MHz

■ Fully characterized at 125 C

Applications

TO-247

■ Audio power amplifier

Description

Figure 1. Internal schematic diagram

The device is a NPN transistor manufactured

using new BiT-LA (Bipolar transistor for linear

amplifier) technology. The resulting transistor

shows good gain linearity behaviour.

Recommended for 70 W to 100 W high fidelity

audio frequency amplifier output stage.

Table 1.

Order code

2STW4468

Device summary

Marking

Package

Packaging

2STW4468

TO-247

Tube

October 2008

Rev 4

1/9

www.st.com

12 3 4 5 6 7...9

中文翻译

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