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2STW1695 PDF预览

2STW1695

更新时间: 2024-11-20 02:57:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
9页 192K
描述
High power PNP epitaxial planar bipolar transistor

2STW1695 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-247包装说明:ROHS COMPLIANT PACKAGE-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.41
最大集电极电流 (IC):10 A集电极-发射极最大电压:140 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):100 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

2STW1695 数据手册

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2STW1695  
High power PNP epitaxial planar bipolar transistor  
General features  
High breakdown voltage V  
= -140V  
CEO  
Complementary to 2STW4468  
Typical f =20MHz  
t
o
Fully characterized at 125 C  
In compliance with the 2002/93/EC European  
Directive  
3
2
1
Applications  
TO-247  
Audio power amplifier  
Description  
Internal schematic diagram  
The device is a PNP transistor manufactured  
using new BiT-LA (Bipolar transistor for linear  
amplifier) technology. The resulting transistor  
shows  
good  
gain  
linearity  
behaviour.  
Recommended for 70W to 100W high fidelity  
audio frequency amplifier output stage.  
Order codes  
Part Number  
Marking  
Package  
Packing  
2STW1695  
2STW1695  
TO-247  
Tube  
February 2007  
Rev 3  
1/9  
www.st.com  
9

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