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2STW4466 PDF预览

2STW4466

更新时间: 2024-11-24 02:57:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
10页 222K
描述
High power NPN epitaxial planar bipolar transistor

2STW4466 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:ROHS COMPLIANT, TO-247, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.8Is Samacsys:N
最大集电极电流 (IC):6 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):60 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

2STW4466 数据手册

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2STW4466  
High power NPN epitaxial planar bipolar transistor  
Features  
High breakdown voltage V  
= 80V  
CEO  
Complementary to 2STW1693  
Typical f = 20MHz  
t
o
Fully characterized at 150 C  
Applications  
3
2
Audio power amplifier  
1
TO-247  
Description  
The device is a NPN transistor manufactured in  
low voltage planar technology using base island  
layout. The resulting transistor shows good gain  
Figure 1. Internal schematic diagram  
linearity coupled with low V  
behaviour.  
CESAT  
Recommended for 45W to 70W high fidelity audio  
frequency amplifier output stage.  
Table 1.  
Order code  
2STW4466  
Device summary  
Marking  
Package  
Packaging  
2STW4466  
TO-247  
Tube  
October 2007  
Rev 1  
1/10  
www.st.com  
10  

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