Datasheet > 2STW4466_08

2STW4466_08

更新时间： 2024-10-14 06:19:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
9页	165K
描述
High power NPN epitaxial planar bipolar transistor

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2STW4466_08 数据手册

2STW4466

High power NPN epitaxial planar bipolar transistor

Features

■ High breakdown voltage V

= 80 V

CEO

■ Complementary to 2STW1693

■ Typical f = 20 MHz

■ Fully characterized at 125 C

Applications

■ Audio power amplifier

TO-247

Description

The device is a NPN transistor manufactured in

low voltage planar technology using base island

layout. The resulting transistor shows good gain

Figure 1. Internal schematic diagram

linearity coupled with low V

behaviour.

CE(sat)

Recommended for 40 W to 70 W high fidelity

audio frequency amplifier output stage.

Table 1.

Order code

2STW4466

Device summary

Marking

Package

Packaging

2STW4466

TO-247

Tube

September 2008

Rev 2

1/9

www.st.com

12 3 4 5 6 7...9

中文翻译

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