2SK3633

更新时间： 2024-02-20 15:04:24

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	239K
描述
Silicon N-Channel MOS Type Switching Regulator Applications

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技术参数
数据手册

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2SK3633 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	SC-65	包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.82	雪崩能效等级（Eas）：	420 mJ
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	800 V
最大漏极电流 (ID)：	7 A	最大漏源导通电阻：	1.7 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	21 A
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON

2SK3633 数据手册

2SK3633

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS IV)

2SK3633

Switching Regulator Applications

Unit: mm

•

Low drain-source ON-resistance: R

High forward transfer admittance: |Y | = 5.2 S (typ.)

= 1.35 Ω (typ.)

DS (ON)

Low leakage current: I

= 100 μA (V

= 640 V)

DSS

Enhancement mode: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

800

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

Drain power dissipation (Tc = 25°C)

150

420

JEDEC

JEITA

⎯

Single-pulse avalanche energy

(Note 2)

SC-65

2-16C1B

Avalanche current

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 4.6 g (typ.)

150

Storage temperature range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.833

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 15.7 mH, I = 7 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2006-11-10

12 3 4 5 6

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