Datasheet > 2SK3636

2SK3636

更新时间： 2024-11-16 12:53:23

品牌	Logo	应用领域
TYSEMI		开关
页数	文件大小	规格书
2页	217K
描述
Avalanche energy capacity guaranteed: EAS 20 mJ High-speed switching: tf = 50 ns

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中文翻译

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数据手册

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2SK3636 数据手册

SSMMDD TTyyppee

TransistIoCrs

Product specification

2SK3636

TO-263

Unit: mm

Features

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Avalanche energy capacity guaranteed: E^AS

20 mJ

Gate-source surrender voltage V^GSS= 30 V guaranteed

High-speed switching: tf = 50 ns

No secondary breakdown

+0.1

1.27

-0.1

0.1max

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain-source surrender voltage

Gate-source surrender voltage

Drain current

Symbol

Rating

Unit

V^DSS

V^GSS

I^D

800

Peak drain current

I^DP

Avalanche energy capability

Power dissipation Ta = 25

Power dissipation

E^AS

P^D

Channel temperature

T^ch

150

Storage temperature

T^stg

-55 to +150

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中文翻译

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与2SK3636相关器件

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2SK3637	TYSEMI	获取价格	Low on-resistance, low Qg High avalanche resistance
2SK3637	KEXIN	获取价格	Silicon N-channel Power MOSFET
2SK3637	PANASONIC	获取价格	Silicon N-channel power MOSFET
2SK3638	KEXIN	获取价格	MOS Field Effect Transistor
2SK3638	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3638	TYSEMI	获取价格	Low on-state resistance RDS(on)1 = 8.5 m MAX. Built-in gate protection diode
2SK3638-ZK	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3639	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3639	KEXIN	获取价格	MOS Field Effect Transistor
2SK3639	TYSEMI	获取价格	Low on-state resistance RDS(on)1 = 5.5 m MAX. Low Ciss: Ciss = 2400 pF TYP.