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2SK3638 PDF预览

2SK3638

更新时间: 2024-11-15 22:52:59
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
7页 150K
描述
SWITCHING N-CHANNEL POWER MOSFET

2SK3638 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3638  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3638 is N-channel MOS FET device that features a low  
on-state resistance and excellent switching characteristics, and  
designed for low voltage high current applications such as  
DC/DC converter with synchronous rectifier.  
PART NUMBER  
PACKAGE  
2SK3638-ZK  
TO-252 (MP-3ZK)  
FEATURES  
(TO-252)  
Low on-state resistance  
RDS(on)1 = 8.5 mMAX. (VGS = 10 V, ID = 32 A)  
RDS(on)2 = 15 mMAX. (VGS = 4.5 V, ID = 18 A)  
Low Ciss: Ciss = 1100 pF TYP.  
Built-in gate protection diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
20  
±20  
V
V
±64  
A
±220  
36  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation  
W
W
°C  
°C  
PT2  
1.0  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
Note PW 10 µs, Duty Cycle 1%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D15966EJ3V0DS00 (3rd edition)  
The mark shows major revised points.  
Date Published January 2005 NS CP(K)  
Printed in Japan  
2002  

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