2SK3642-ZK

更新时间： 2024-01-09 19:09:37

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管开关
页数	文件大小	规格书
8页	166K
描述
SWITCHING N-CHANNEL POWER MOSFET

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中文翻译

获取价格

技术参数
数据手册

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2SK3642-ZK 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	64 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	36 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

2SK3642-ZK 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3642

SWITCHING

N-CHANNEL POWER MOS FET

ORDERING INFORMATION

DESCRIPTION

The 2SK3642 is N-channel MOS FET device that features a low

on-state resistance and excellent switching characteristics, and

designed for low voltage high current applications such as

DC/DC converter with synchronous rectifier.

PART NUMBER

PACKAGE

2SK3642-ZK

TO-252 (MP-3ZK)

FEATURES

• Low on-state resistance

(TO-252)

R^DS(on)1= 9.5 mΩ MAX. (VGS = 10 V, ID = 32 A)

R^DS(on)2= 16 mΩ MAX. (VGS = 4.5 V, ID = 18 A)

• Low C^iss: Ciss = 1100 pF TYP.

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (VDS = 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

VDSS

VGSS

ID(DC)

I^D(pulse)

PT1

±20

±64

±190

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation

°C

PT2

1.0

Channel Temperature

Tch

150

Storage Temperature

T^stg

–55 to + 150 °C

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

I^AS

E^AS

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting T^ch= 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D15970EJ4V0DS00 (4th edition)

Date Published January 2005 NS CP(K)

Printed in Japan

The mark

shows major revised points.

2002

12 3 4 5 6 7 8

中文翻译

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与2SK3642-ZK相关器件

型号	品牌	获取价格	描述	数据表
2SK3642-ZK-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,64A I(D),TO-252
2SK3643	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3643	KEXIN	获取价格	MOS Field Effect Transistor
2SK3643	TYSEMI	获取价格	Low on-state resistance RDS(on)1 =6 m MAX. Low Ciss: Ciss = 2400pF TYP.
2SK3643-ZK	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3643-ZK-E1	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,64A I(D),TO-252
2SK3644-01	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3645-01MR	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3646-01L	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3646-01S	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET