Datasheet > 2SK3643-ZK-E1

2SK3643-ZK-E1

更新时间： 2024-11-16 14:47:39

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	165K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,64A I(D),TO-252

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中文翻译

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技术参数
数据手册

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2SK3643-ZK-E1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	配置：	Single
最大漏极电流 (Abs) (ID)：	64 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	40 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

2SK3643-ZK-E1 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3643

SWITCHING

N-CHANNEL POWER MOS FET

ORDERING INFORMATION

DESCRIPTION

PART NUMBER

PACKAGE

The 2SK3643 is N-channel MOS FET device that

features a low on-state resistance and excellent switching

characteristics, and designed for low voltage high current

applications such as DC/DC converter with synchronous

rectifier.

TO-252 (MP-3ZK)

2SK3643-ZK

(TO-252)

FEATURES

• Low on-state resistance

R^DS(on)1= 6 mΩ MAX. (VGS = 10 V, ID = 32 A)

R^DS(on)2= 9 mΩ MAX. (VGS = 4.5 V, ID = 32 A)

• Low C^iss: Ciss = 2400 pF TYP.

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (VDS = 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

VDSS

VGSS

ID(DC)

I^D(pulse)

PT1

±20

±64

±256

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation

P^T2

1.0

Channel Temperature

T^ch

150

°C

Storage Temperature

T^stg

−55 to +150

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

I^AS

E^AS

160

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting T^ch= 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D15971EJ4V0DS00 (4th edition)

The mark shows major revised points.

Date Published January 2005 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7 8

中文翻译

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