2SK3650-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
P4
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
150
Unit
V
Drain-source voltage
VDSX *5
ID
120
±33
±132
±30
33
V
Continuous drain current
Pulsed drain current
A
Equivalent circuit schematic
ID(puls]
VGS
A
Gate-source voltage
V
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR *2
Drain(D)
A
EAS*1
169
20
mJ
kV/µs
kV/µs
W
dVDS/dt *4
dV/dt *3
PD Ta=25
Tc=25
Tch
5
°C
°C
1.67
Gate(G)
150
+150
-55 to +150
Source(S)
Operating and storage
temperature range
°C
°C
Tstg
<
*1 L=228µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch=150°C
<
<
<
<
*4 VDS 150V *5 VGS=-30V
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
µ
Drain-source breakdown voltaget
Gate threshold voltage
V
ID=250 A
VGS=0V
VDS=VGS
150
µ
V
ID= 250 A
3.0
5.0
µA
25
VDS=150V VGS=0V
VDS=120V VGS=0V
Tch=25°C
Zero gate voltage drain current
IDSS
Tch=125°C
250
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
VGS=±30V
ID=11.5A
VDS=0V
10
54
100
VGS=10V
mΩ
S
70
8
16
ID=11.5A VDS=25V
VDS=75V
Ciss
pF
1150
200
17
1730
300
26
Coss
Crss
td(on)
tr
Output capacitance
VGS=0V
Reverse transfer capacitance
Turn-on time ton
f=1MHz
ns
VCC=48V ID=11.5A
VGS=10V
13
20
15
23
td(off)
tf
Turn-off time toff
34
51
RGS=10 Ω
15
23
QG
QGS
QGD
IAV
nC
Total Gate Charge
34
51
VCC=48V
ID=23A
Gate-Source Charge
Gate-Drain Charge
9
13.5
19
12.5
VGS=10V
µ
33
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=228 H Tch=25°C
VSD
trr
Qrr
1.10
130
0.6
1.65
V
IF=23A VGS=0V Tch=25°C
IF=23A VGS=0V
-di/dt=100A/µs
Tch=25°C
ns
µC
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.833
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
75.0
°C/W
1