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2SK3650-01L PDF预览

2SK3650-01L

更新时间: 2024-11-16 07:32:35
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富士电机 - FUJI /
页数 文件大小 规格书
4页 258K
描述
N-CHANNEL SILICON POWER MOSFET

2SK3650-01L 数据手册

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2SK3650-01L,S,SJ  
FUJI POWER MOSFET  
200304  
N-CHANNEL SILICON POWER MOSFET  
Outline Drawings [mm]  
Super FAP-G Series  
Features  
High speed switching  
Low on-resistance  
No secondary breadown  
Low driving power  
Avalanche-proof  
Applications  
P4  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DCconverters  
Maximum ratings and characteristicAbsolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Item  
Symbol  
VDS  
Ratings  
150  
Unit  
V
Drain-source voltage  
VDSX *5  
ID  
120  
±33  
±132  
±30  
33  
V
Continuous drain current  
Pulsed drain current  
A
Equivalent circuit schematic  
ID(puls]  
VGS  
A
Gate-source voltage  
V
Repetitive or non-repetitive  
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Max. power dissipation  
IAR *2  
Drain(D)  
A
EAS*1  
169  
20  
mJ  
kV/µs  
kV/µs  
W
dVDS/dt *4  
dV/dt *3  
PD Ta=25  
Tc=25  
Tch  
5
°C  
°C  
1.67  
Gate(G)  
150  
+150  
-55 to +150  
Source(S)  
Operating and storage  
temperature range  
°C  
°C  
Tstg  
<
*1 L=228µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph  
*2 Tch=150°C  
<
<
<
<
*4 VDS 150V *5 VGS=-30V  
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C  
=
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Symbol  
V(BR)DSS  
VGS(th)  
Item  
Test Conditions  
µ
Drain-source breakdown voltaget  
Gate threshold voltage  
V
ID=250 A  
VGS=0V  
VDS=VGS  
150  
µ
V
ID= 250 A  
3.0  
5.0  
µA  
25  
VDS=150V VGS=0V  
VDS=120V VGS=0V  
Tch=25°C  
Zero gate voltage drain current  
IDSS  
Tch=125°C  
250  
IGSS  
RDS(on)  
gfs  
nA  
Gate-source leakage current  
Drain-source on-state resistance  
Forward transcondutance  
Input capacitance  
VGS=±30V  
ID=11.5A  
VDS=0V  
10  
54  
100  
VGS=10V  
m  
S
70  
8
16  
ID=11.5A VDS=25V  
VDS=75V  
Ciss  
pF  
1150  
200  
17  
1730  
300  
26  
Coss  
Crss  
td(on)  
tr  
Output capacitance  
VGS=0V  
Reverse transfer capacitance  
Turn-on time ton  
f=1MHz  
ns  
VCC=48V ID=11.5A  
VGS=10V  
13  
20  
15  
23  
td(off)  
tf  
Turn-off time toff  
34  
51  
RGS=10 Ω  
15  
23  
QG  
QGS  
QGD  
IAV  
nC  
Total Gate Charge  
34  
51  
VCC=48V  
ID=23A  
Gate-Source Charge  
Gate-Drain Charge  
9
13.5  
19  
12.5  
VGS=10V  
µ
33  
A
Avalanche capability  
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
L=228 H Tch=25°C  
VSD  
trr  
Qrr  
1.10  
130  
0.6  
1.65  
V
IF=23A VGS=0V Tch=25°C  
IF=23A VGS=0V  
-di/dt=100A/µs  
Tch=25°C  
ns  
µC  
Thermalcharacteristics  
Item  
Min.  
Typ.  
Max. Units  
Symbol  
Test Conditions  
Rth(ch-c)  
channel to case  
0.833  
°C/W  
Thermal resistance  
Rth(ch-a)  
channel to ambient  
75.0  
°C/W  
1

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