Datasheet > 2SK3652

2SK3652

更新时间： 2024-11-16 12:53:23

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
2页	234K
描述
Low on-resistance, low Qg High avalanche resistance For high-speed switching

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2SK3652 数据手册

SSMMDD TTyyppee

TransistIoCrs

Product specification

2SK3652

TO-263

Unit: mm

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Features

Low on-resistance, low Qg

High avalanche resistance

For high-speed switching

+0.1

1.27

-0.1

0.1max

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain-source surrender voltage

Gate-source surrender voltage

Drain current

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

230

Peak drain current

I^DP

200

Avalanche energy capability *

Power dissipation Ta = 25

Power dissipation

E^AS

2 200

P^D

100

Channel temperature

T^ch

150

Storage temperature

T^stg

-55 to +150

* L = 1 mH, I^L= 50 A, V^DD= 100 V, 1 pulse, T^a= 25

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2SK3653BCE	RENESAS	获取价格	2SK3653BCE
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2SK3653BCF	RENESAS	获取价格	2SK3653BCF
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