Datasheet > 2SK3651-01MR

2SK3651-01MR

更新时间： 2024-11-15 23:20:39

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2SK3651-01MR 数据手册

SPECIFICATION

Device Name

Type Name

Spec. No.

Date

Power MOSFET

2SK3651-01R

MS5F5155

Feb.-01-2002

Fuji Electric Co.,Ltd.

Matsumoto Factory

NAME

APPROVED

DATE

Fuji Electric Co.,Ltd.

DRAWN

CHECKED

Feb.-01-'02

MS5F5155

1 / 20

H04-004-05

12 3 4 5 6 7...20

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型号	品牌	获取价格	描述	数据表
2SK3651-01R	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3652	KEXIN	获取价格	N-channel Enhancement Mode MOSFET
2SK3652	TYSEMI	获取价格	Low on-resistance, low Qg High avalanche resistance For high-speed switching
2SK3653	NEC	获取价格	Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction
2SK3653-A	NEC	获取价格	Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction
2SK3653B	NEC	获取价格	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
2SK3653B	RENESAS	获取价格	10mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 3PXSOF, 3 PIN
2SK3653B-A	RENESAS	获取价格	TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,90UA I(DSS),SOT-416VAR
2SK3653BCE	RENESAS	获取价格	2SK3653BCE
2SK3653BCE-T1-A	RENESAS	获取价格	TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,90UA I(DSS),SOT-416VAR