是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.82 | FET 技术: | JUNCTION |
最高工作温度: | 125 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.1 W |
子类别: | Other Transistors | 表面贴装: | YES |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3653B-T2 | RENESAS |
获取价格 |
TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,90UA I(DSS),SOT-416VAR | |
2SK3653B-T2-A | RENESAS |
获取价格 |
TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,90UA I(DSS),SOT-416VAR | |
2SK3653C | NEC |
获取价格 |
JUNCTION FIELD EFFECT TRANSISTOR | |
2SK3653CEE | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK3653CEF | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK3653CEH | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK3653CEJ | NEC |
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Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK3653J2 | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK3653J2-A | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK3653J2-AT | RENESAS |
获取价格 |
TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,38UA I(DSS),SOT-416VAR |