是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
Is Samacsys: | N | FET 技术: | JUNCTION |
最高工作温度: | 125 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.1 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3653B-T1 | RENESAS |
获取价格 |
TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,90UA I(DSS),SOT-416VAR | |
2SK3653B-T1-A | RENESAS |
获取价格 |
2SK3653B-T1-A | |
2SK3653B-T2 | RENESAS |
获取价格 |
TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,90UA I(DSS),SOT-416VAR | |
2SK3653B-T2-A | RENESAS |
获取价格 |
TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,90UA I(DSS),SOT-416VAR | |
2SK3653C | NEC |
获取价格 |
JUNCTION FIELD EFFECT TRANSISTOR | |
2SK3653CEE | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK3653CEF | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK3653CEH | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK3653CEJ | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK3653J2 | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction |