Datasheet > 2SK3653B-A

2SK3653B-A

更新时间： 2024-11-16 14:47:47

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
5页	123K
描述
TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,90UA I(DSS),SOT-416VAR

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中文翻译

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技术参数
数据手册

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2SK3653B-A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
FET 技术：	JUNCTION	最高工作温度：	125 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.1 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SK3653B-A 数据手册

DATA SHEET

^{JUNCTION FIELD EF}2^FES^CTK^TR3^A6^NS5^IS3^TOB^R

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SK3653B is suitable for converter of ECM.

+0.1

0.3 0.0ꢀ

0.13

–0.0ꢀ

General-purpose product.

FEATURES

0 to 0.0ꢀ

• Low noise:

−108.5 dB TYP. (V^DD= 2.0 V, C = 5 pF, RL = 2.2 kΩ)

• Especially suitable for audio and telephone

• Super thin thickness package:

t = 0.37 mm TYP.

0.4ꢀ

1.4 0.1

MAX. 0.4

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3653B

3pXSOF (0814)

+0.1

–0

0.2

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage (VGS = −1.0 V)

Gate to Drain Voltage

Drain Current

VDSX

V^GDO

I^D

−20

°C

Gate Current

I^G

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

100

T^j

125

1: Source

2: Drain

3: Gate

T^stg

−55 to +125

°C

Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D17284EJ1V0DS00 (1st edition)

Date Published August 2004 NS CP(K)

Printed in Japan

2004

12 3 4 5

中文翻译

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