Datasheet > 2SK3635

2SK3635

更新时间： 2024-11-16 12:53:23

品牌	Logo	应用领域
TYSEMI		晶体栅极二极管晶体管开关
页数	文件大小	规格书
1页	113K
描述
High voltage: VDSS = 200 V Gate voltage rating: -30 V Built-in gate protection diode

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Product specification

2SK3635

TO-252

Features

Unit: mm

+0.15

-0.15

+0.1

2.30

-0.1

6.50

High voltage: V^DSS= 200 V

Gate voltage rating: 30 V

Low on-state resistance

+0.2

5.30

-0.2

+0.8

0.50

-0.7

R^DS(on)= 0.43

MAX. (V^GS= 10 V, I^D= 4.0 A)

0.127

max

+0.1

0.80

-0.1

Low C^iss: C^iss= 390 pF TYP.

Built-in gate protection diode

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

VGSS

I^D

Rating

Unit

200

Gate to source voltage

8.0

Drain current

I^dp*

Power dissipation

T^C=25

T^A=25

P^D

1.0

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate cut off voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Symbol

I^DSS

Testconditons

Min

Typ

Max

Unit

V^DS=200V,V^GS=0

V^GS= 30V,V^DS=0

VDS=10V,ID=1mA

V^DS=10V,I^D=4.0A

VGS=10V,ID=4.0A

I^GSS

VGS(off)

2.5

3.5

4.5

Y^fs

R^DS(on)

C^iss

C^oss

C^rss

t^on

0.34 0.43

390

V^DS=10V,V^GS=0,f=1MHZ

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

t^r

I^D=4.0A,V^GS(on)=10V,R^G=0 ,V^DD=100V

Turn-off delay time

Fall time

t^off

Total Gate Charge

Q^G

V^DD= 160V

V^GS= 10 V

I^D=8.0A

Gate to Source Charge

Gate to Drain Charge

Q^GS

Q^GD

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