Datasheet > 2SK3634

2SK3634

更新时间： 2024-11-16 12:31:47

品牌	Logo	应用领域
TYSEMI		晶体栅极二极管晶体管开关
页数	文件大小	规格书
1页	113K
描述
High voltage: VDSS = 200 V Gate voltage rating: 30 V Built-in gate protection diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK3634 数据手册

Product specification

2SK3634

TO-252

Unit: mm

+0.15

-0.15

+0.1

2.30

-0.1

6.50

Features

+0.2

5.30

-0.2

+0.8

0.50

-0.7

High voltage: V^DSS= 200 V

Gate voltage rating: 30 V

0.127

max

R^DS(on)= 0.60

MAX. (V^GS= 10 V, I^D= 3.0 A)

+0.1

0.80

-0.1

Low C^iss: C^iss= 270 pF TYP. (V^DS= 10 V, V^GS= 0 V)

Built-in gate protection diode

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

200

Gate to source voltage

6.0

Drain current

I^dp*

Power dissipation

TC=25

TA=25

P^D

1.0

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate cut off voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Symbol

I^DSS

Testconditons

Min

Typ

Max

Unit

V^DS=200V,V^GS=0

V^GS= 30V,V^DS=0

V^DS=10V,I^D=1mA

V^DS=10V,I^D=3.0A

V^GS=10V,I^D=3.0A

I^GSS

V^GS(off)

2.5

3.5

4.5

Y^fs

R^DS(on)

C^iss

C^oss

C^rss

t^on

0.47 0.60

270

V^DS=10V,V^GS=0,f=1MHZ

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

t^r

I^D=3.0A,V^GS(on)=10V,R^G=0 ,V^DD=100V

Turn-off delay time

Fall time

t^off

Total Gate Charge

Q^G

V^DD= 160V

V^GS= 10 V

I^D= 6.0A

Gate to Source Charge

Gate to Drain Charge

Q^GS

Q^GD

1.5

4.5

http://www.twtysemi.com

sales@twtysemi.com

1 of 1

4008-318-123

中文翻译

下载PDF

与2SK3634相关器件

型号	品牌	获取价格	描述	数据表
2SK3634-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-
2SK3634-Z	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3634-Z	RENESAS	获取价格	6000mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252, TO-252, 3 PIN
2SK3635	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3635	KEXIN	获取价格	MOS Field Effect Transistor
2SK3635	TYSEMI	获取价格	High voltage: VDSS = 200 V Gate voltage rating: -30 V Built-in gate protection diode
2SK3635-AZ	NEC	获取价格	暂无描述
2SK3635-Z	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3636	TYSEMI	获取价格	Avalanche energy capacity guaranteed: EAS 20 mJ High-speed switching: tf = 50 ns
2SK3636	KEXIN	获取价格	Silicon N-channel Power MOSFET