2SK3635-AZ

更新时间： 2024-11-16 13:04:27

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日电电子 - NEC		晶体小信号场效应晶体管开关
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中文翻译

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数据手册

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2SK3635-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3635

SWITCHING

N-CHANNEL POWER MOS FET

ORDERING INFORMATION

DESCRIPTION

The 2SK3635 is N-channel MOS FET device that features

a low on-state resistance and excellent switching

characteristics, and designed for high voltage applications

such as DC/DC converter.

PART NUMBER

PACKAGE

2SK3635

TO-251 (MP-3)

TO-252 (MP-3Z)

2SK3635-Z

FEATURES

• High voltage: VDSS = 200 V

• Gate voltage rating: ±30 V

• Low on-state resistance

R^DS(on)= 0.43 Ω MAX. (VGS = 10 V, ID = 4.0 A)

• Low C^iss: Ciss = 390 pF TYP.

• Built-in gate protection diode

• TO-251/TO-252 package

• Avalanche capability rated

(TO-251)

(TO-252)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (TC = 25°C)

Drain Current (pulse) ^Note1

VDSS

VGSS

ID(DC)

I^D(pulse)

PT1

200

±30

±8.0

±24

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (TA = 25°C)

Channel Temperature

°C

PT2

1.0

T^ch

150

Storage Temperature

Tstg

–55 to +150

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

Repetitive Avalanche Current ^Note3

Repetitive Avalanche Energy ^Note3

I^AS

E^AS

6.4

I^AR

E^AR

2.4

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting T^ch= 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH

3. T^ch≤ 125°C, RG = 25 Ω, VDD = 100 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D15932EJ2V0DS00 (2nd edition)

Date Published August 2004 NS CP(K)

Printed in Japan

The mark

shows major revised points.

2001

12 3 4 5 6 7 8

中文翻译

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