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2SK3637 PDF预览

2SK3637

更新时间: 2024-01-21 13:07:16
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松下 - PANASONIC /
页数 文件大小 规格书
3页 64K
描述
Silicon N-channel power MOSFET

2SK3637 数据手册

 浏览型号2SK3637的Datasheet PDF文件第2页浏览型号2SK3637的Datasheet PDF文件第3页 
Power MOSFETs  
2SK3637  
Silicon N-channel power MOSFET  
Unit: mm  
15.5 0.5  
3.0 0.3  
5˚  
φ 3.2 0.1  
For PDP/For high-speed switching  
5˚  
Features  
Low on-resistance, low Qg  
High avalanche resistance  
5˚  
5˚  
5˚  
(4.0)  
2.0 0.2  
Absolute Maximum Ratings TC = 25°C  
1.1 0.1  
0.7 0.1  
Parameter  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
5.45 0.3  
Drain-source surrender voltage  
Gate-source surrender voltage  
200  
10.9 0.5  
30  
V
5˚  
50  
200  
A
Drain current  
1
2
3
1: Gate  
2: Drain  
3: Source  
Peak drain current  
IDP  
A
Avalanche energy capability *  
EAS  
PD  
2000  
100  
mJ  
W
TOP-3E-A1 Package  
Power  
dissipation  
Ta = 25°C  
3
Internal Connection  
Channel temperature  
Storage temperature  
Tch  
150  
°C  
°C  
D
S
Tstg  
55 to +150  
Note) : L = 0.8 mH, I = 50 A, VDD = 100 V, 1 pulse, Ta = 25°C  
*
L
G
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Gate-drain surrender voltage  
Diode forward voltage  
Symbol  
VDSS  
VDSF  
Vth  
Conditions  
Min  
Typ  
Max  
Unit  
V
ID = 1 mA, VGS = 0  
200  
IDR = 50 A, VGS = 0  
VDS = 25 V, ID = 10 mA  
VDS = 160 V, VGS = 0  
1.5  
4
V
Gate threshold voltage  
2
V
Drain-source cutoff current  
Gate-source cutoff currentt  
Drain-source on resistance  
Forward transfer admittance  
IDSS  
100  
1
µA  
µA  
mΩ  
S
IGSS  
VGS = 30 V, VDS = 0  
RDS(on) VGS = 10 V, ID = 25 A  
29  
30  
40  
Yfs  
VDS = 25 V, ID = 25 A  
15  
Short-circuit forward transfer capacitance  
(Common-source)  
Ciss  
VDS = 25 V, VGS = 0, f = 1 MHz  
4550  
pF  
Short-circuit output capacitance  
(Common-source)  
Coss  
Crss  
750  
75  
pF  
pF  
Reverse transfer capacitance  
(Common-source)  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
VDD = 100 V, ID = 25 A  
50  
ns  
ns  
ns  
ns  
ns  
nC  
RL = 4 , VGS = 10 V  
125  
390  
140  
210  
820  
Turn-off delay time  
Fall time  
Reverse recovery time  
Reverse recovery charge  
trr  
L = 230 µH, VDD = 100 V  
Qrr  
IDR = 25 A, di /dt = 100 A/ µs  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: February 2004  
SJG00035AED  
1

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