Power MOSFETs
2SK3637
Silicon N-channel power MOSFET
Unit: mm
15.5 0.5
3.0 0.3
5˚
φ 3.2 0.1
For PDP/For high-speed switching
5˚
■ Features
• Low on-resistance, low Qg
• High avalanche resistance
5˚
5˚
5˚
(4.0)
2.0 0.2
■ Absolute Maximum Ratings TC = 25°C
1.1 0.1
0.7 0.1
Parameter
Symbol
VDSS
VGSS
ID
Rating
Unit
V
5.45 0.3
Drain-source surrender voltage
Gate-source surrender voltage
200
10.9 0.5
30
V
5˚
50
200
A
Drain current
1
2
3
1: Gate
2: Drain
3: Source
Peak drain current
IDP
A
Avalanche energy capability *
EAS
PD
2000
100
mJ
W
TOP-3E-A1 Package
Power
dissipation
Ta = 25°C
3
Internal Connection
Channel temperature
Storage temperature
Tch
150
°C
°C
D
S
Tstg
−55 to +150
Note) : L = 0.8 mH, I = 50 A, VDD = 100 V, 1 pulse, Ta = 25°C
*
L
G
■ Electrical Characteristics TC = 25°C 3°C
Parameter
Gate-drain surrender voltage
Diode forward voltage
Symbol
VDSS
VDSF
Vth
Conditions
Min
Typ
Max
Unit
V
ID = 1 mA, VGS = 0
200
IDR = 50 A, VGS = 0
VDS = 25 V, ID = 10 mA
VDS = 160 V, VGS = 0
−1.5
4
V
Gate threshold voltage
2
V
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
IDSS
100
1
µA
µA
mΩ
S
IGSS
VGS = 30 V, VDS = 0
RDS(on) VGS = 10 V, ID = 25 A
29
30
40
Yfs
VDS = 25 V, ID = 25 A
15
Short-circuit forward transfer capacitance
(Common-source)
Ciss
VDS = 25 V, VGS = 0, f = 1 MHz
4550
pF
Short-circuit output capacitance
(Common-source)
Coss
Crss
750
75
pF
pF
Reverse transfer capacitance
(Common-source)
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VDD = 100 V, ID = 25 A
50
ns
ns
ns
ns
ns
nC
RL = 4 Ω, VGS = 10 V
125
390
140
210
820
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
trr
L = 230 µH, VDD = 100 V
Qrr
IDR = 25 A, di /dt = 100 A/ µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2004
SJG00035AED
1