Datasheet > 2SK3638

2SK3638

更新时间： 2024-11-16 12:31:47

品牌	Logo	应用领域
TYSEMI		栅极二极管
页数	文件大小	规格书
1页	113K
描述
Low on-state resistance RDS(on)1 = 8.5 m MAX. Built-in gate protection diode

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2SK3638 数据手册

MOSFICET

Product specification

2SK3638

TO-252

Unit: mm

Features

+0.15

-0.15

+0.1

2.30

-0.1

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

Low on-state resistance

R^DS(on)1= 8.5 m MAX. (V^GS= 10 V, I^D= 32 A)

R^DS(on)2= 15 m MAX. (VGS = 4.5 V, ID = 18 A)

Low C^iss: C^iss= 1100 pF TYP.

0.127

max

+0.1

0.80

-0.1

Built-in gate protection diode

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

220

Power dissipation

T^C=25

T^A=25

P^D

1.0

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Symbol

I^DSS

Testconditons

Min

Typ

Max

Unit

V^DS=20V,V^GS=0

Gate leakage current

Gate cut off voltage

I^GSS

V^GS= 20V,V^DS=0

V^DS=10V,I^D=1mA

V^DS=10V,I^D=32A

V^GS=10V,I^D=32A

V^GS=4.5V,I^D=18A

V^GS(off)

Y^fs

R^DS(on)1

R^DS(on)2

1.5

2.5

Forward transfer admittance

6.8

8.5

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C^iss

C^oss

Crss

ton

1100

450

170

VDS=10V,VGS=0,f=1MHZ

t^r

4.3

ID=32A,VGS(on)=10V,RG=0 ,VDD=10V

Turn-off delay time

Fall time

t^off

9.7

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

Q^GS

Q^GD

V^DD= 16V

V^GS= 10 V

I^D=64A

4.3

5.1

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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