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2SK3638

更新时间: 2024-02-27 02:33:12
品牌 Logo 应用领域
TYSEMI 栅极二极管
页数 文件大小 规格书
1页 113K
描述
Low on-state resistance RDS(on)1 = 8.5 m MAX. Built-in gate protection diode

2SK3638 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.82配置:Single
最大漏极电流 (Abs) (ID):64 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):36 W
子类别:FET General Purpose Power表面贴装:YES
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

2SK3638 数据手册

  
MOSFICET  
Product specification  
2SK3638  
TO-252  
Unit: mm  
Features  
+0.15  
-0.15  
+0.1  
2.30  
-0.1  
6.50  
+0.2  
5.30  
-0.2  
+0.8  
0.50  
-0.7  
Low on-state resistance  
RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 32 A)  
RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 18 A)  
Low Ciss: Ciss = 1100 pF TYP.  
0.127  
max  
+0.1  
0.80  
-0.1  
Built-in gate protection diode  
+0.1  
0.60  
-0.1  
2.3  
4.60  
1 Gate  
+0.15  
-0.15  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
20  
20  
Gate to source voltage  
V
A
64  
Drain current  
Idp *  
A
220  
36  
Power dissipation  
TC=25  
TA=25  
PD  
W
1.0  
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10 s,Duty Cycle 1%  
Electrical Characteristics Ta = 25  
Parameter  
Drain cut-off current  
Symbol  
IDSS  
Testconditons  
Min  
Typ  
Max  
10  
Unit  
A
VDS=20V,VGS=0  
Gate leakage current  
Gate cut off voltage  
IGSS  
VGS= 20V,VDS=0  
VDS=10V,ID=1mA  
VDS=10V,ID=32A  
VGS=10V,ID=32A  
VGS=4.5V,ID=18A  
10  
A
VGS(off)  
Yfs  
RDS(on)1  
RDS(on)2  
1.5  
12  
2.5  
V
Forward transfer admittance  
25  
6.8  
10  
S
8.5  
15  
m
Drain to source on-state resistance  
m
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Ciss  
Coss  
Crss  
ton  
1100  
450  
170  
10  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
VDS=10V,VGS=0,f=1MHZ  
tr  
4.3  
35  
ID=32A,VGS(on)=10V,RG=0 ,VDD=10V  
Turn-off delay time  
Fall time  
toff  
tf  
9.7  
22  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain Charge  
QG  
QGS  
QGD  
VDD = 16V  
VGS = 10 V  
ID =64A  
4.3  
5.1  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 1  
4008-318-123  

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