生命周期: | Active | 零件包装代码: | TO-220AB |
包装说明: | TO-220AB, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.75 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 387 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (Abs) (ID): | 40 A | 最大漏极电流 (ID): | 40 A |
最大漏源导通电阻: | 0.041 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 135 W | 最大脉冲漏极电流 (IDM): | 160 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SK3590-01 | FUJI |
当前型号 |
N-CHANNEL SILICON POWER MOSFET | |
2SK2943 | ALLEGRO |
类似代替 |
Power Field-Effect Transistor, TO-220AB, TO-220F, FM20, 3 PIN | |
IXTH36N50P | IXYS |
功能相似 |
PolarHV Power MOSFET | |
IXFH36N50P | IXYS |
功能相似 |
PolarHV HiPerFET Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3591 | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3591-01MR | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3591-01MR_03 | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3592-01L | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3592-01S | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3592-01SJ | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3593-01 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3594-01 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3595-01MR | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3596-01L | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |