生命周期: | Transferred | 包装说明: | CYLINDRICAL, O-PBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.21 | 配置: | SINGLE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 0.03 A |
最高频带: | VERY HIGH FREQUENCY BAND | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK359-E | RENESAS |
获取价格 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-92 |
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2SK359ERF | HITACHI |
获取价格 |
暂无描述 |
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2SK359ERR | RENESAS |
获取价格 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-92, TO-92(2), 3 PIN |
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2SK359ERR | HITACHI |
获取价格 |
暂无描述 |
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2SK359F | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | TO-92 |
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2SK359-F | HITACHI |
获取价格 |
暂无描述 |
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2SK359-F | RENESAS |
获取价格 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-92 |
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2SK359FRF | RENESAS |
获取价格 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-92, TO-92(2), 3 PIN |
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2SK359FRR | HITACHI |
获取价格 |
暂无描述 |
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2SK359FRR | RENESAS |
获取价格 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-92, TO-92(2), 3 PIN |
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