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2SK3607-01MR PDF预览

2SK3607-01MR

更新时间: 2024-01-09 17:04:53
品牌 Logo 应用领域
富士电机 - FUJI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 110K
描述
N-CHANNEL SILICON POWER MOSFET

2SK3607-01MR 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.74
Is Samacsys:N雪崩能效等级(Eas):175 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):13 A
最大漏源导通电阻:0.17 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):52 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3607-01MR 数据手册

 浏览型号2SK3607-01MR的Datasheet PDF文件第2页浏览型号2SK3607-01MR的Datasheet PDF文件第3页浏览型号2SK3607-01MR的Datasheet PDF文件第4页 
2SK3607-01MR  
FUJI POWER MOSFET  
200304  
N-CHANNEL SILICON POWER MOSFET  
Super FAP-G Series  
Outline Drawings (mm)  
Features  
TO-220F  
High speed switching  
Low on-resistance  
No secondary breadown  
Low driving power  
Avalanche-proof  
Applications  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DCconverters  
Maximum ratings and characteristicAbsolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Item  
Symbol  
Ratings  
200  
Unit  
V
Drain-source voltage  
VDS  
V
VDSX *5  
ID  
170  
±18  
±72  
±30  
18  
A
Continuous drain current  
Pulsed drain current  
Gate-source voltage  
Equivalent circuit schematic  
A
ID(puls]  
VGS  
V
A
Non-repetitive Avalanche current IAS *2  
Drain(D)  
mJ  
kV/µs  
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Max. power dissipation  
EAS *1  
dVDS/dt *4  
dV/dt *3  
PD Ta=25  
Tc=25  
125.5  
20  
kV/µs  
W
5
°C  
°C  
2.16  
Gate(G)  
37  
+150  
Source(S)  
Operating and storage  
temperature range  
Isolation voltage  
Tch  
°C  
Tstg  
-55 to +150  
2
°C  
VISO *6  
kVrms  
<
*1 L=620µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch 150°C  
=
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C *4 VDS 200V *5 VGS=-30V *6 t=60sec f=60Hz  
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Symbol  
V(BR)DSS  
VGS(th)  
Test Conditions  
Item  
µ
ID= 250 A  
VGS=0V  
V
200  
Drain-source breakdown voltaget  
Gate threshold voltage  
µ
ID= 250 A  
VDS=VGS  
V
3.0  
5.0  
25  
Tch=25°C  
µA  
VDS=200V VGS=0V  
Zero gate voltage drain current  
IDSS  
Tch=125°C  
250  
100  
170  
VDS=160V VGS=0V  
VGS=±30V VDS=0V  
IGSS  
RDS(on)  
gfs  
nA  
10  
131  
11  
Gate-source leakage current  
Drain-source on-state resistance  
Forward transcondutance  
Input capacitance  
ID=6.5A VGS=10V  
m  
S
5.5  
ID=6.5A VDS=25V  
VDS=75V  
Ciss  
Coss  
Crss  
td(on)  
tr  
770  
110  
5
1155  
165  
pF  
VGS=0V  
Output capacitance  
7.5  
18  
3.9  
33  
9.2  
f=1MHz  
Reverse transfer capacitance  
Turn-on time ton  
ns  
VCC=48V ID=6.5A  
12  
2.6  
22  
6.1  
VGS=10V  
td(off)  
tf  
Turn-off time toff  
RGS=10 Ω  
21  
8
31.5  
12  
QG  
VCC=100V  
ID=13A  
nC  
Total Gate Charge  
QGS  
QGD  
IAV  
Gate-Source Charge  
Gate-Drain Charge  
5
7.5  
VGS=10V  
µ
18  
L=620 H Tch=25°C  
A
Avalanche capability  
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
1.10  
1.65  
VSD  
IF=13A VGS=0V Tch=25°C  
IF=13A VGS=0V  
-di/dt=100A/µs  
V
0.15  
0.88  
trr  
Qrr  
µs  
µC  
Tch=25°C  
Thermalcharacteristics  
Item  
Symbol  
Test Conditions  
Min.  
Typ.  
Max. Units  
Rth(ch-c)  
channel to case  
3.378  
°C/W  
Thermal resistance  
Rth(ch-a)  
channel to ambient  
58.0  
°C/W  
www.fujielectric.co.jp/denshi/scd  
1

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