生命周期: | Transferred | 包装说明: | CYLINDRICAL, O-PBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.21 | 配置: | SINGLE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 0.03 A |
最高频带: | VERY HIGH FREQUENCY BAND | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK360 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK360 | RENESAS |
获取价格 |
Silicon N-Channel MOS FET | |
2SK3600-01L | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3600-01S | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3600-01SJ | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3601-01 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3601-01_03 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3602-01 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3603-01MR | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3604-01L | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |