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2SK360IGDUR PDF预览

2SK360IGDUR

更新时间: 2024-11-15 13:00:51
品牌 Logo 应用领域
日立 - HITACHI /
页数 文件大小 规格书
5页 27K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MPAK-3

2SK360IGDUR 数据手册

 浏览型号2SK360IGDUR的Datasheet PDF文件第2页浏览型号2SK360IGDUR的Datasheet PDF文件第3页浏览型号2SK360IGDUR的Datasheet PDF文件第4页浏览型号2SK360IGDUR的Datasheet PDF文件第5页 
2SK360  
Silicon N-Channel MOS FET  
Application  
VHF amplifier  
Outline  
MPAK  
3
1
1. Gate  
2. Drain  
3. Source  
2

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