生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.82 | 雪崩能效等级(Eas): | 129.1 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (Abs) (ID): | 14 A |
最大漏极电流 (ID): | 14 A | 最大漏源导通电阻: | 0.26 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 105 W | 最大脉冲漏极电流 (IDM): | 56 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3612-01SJ | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3613-01 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3614 | SANYO |
获取价格 |
UltraHigh-Speed Switching Applications | |
2SK3615 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK3617 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK3618 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK362 | TOSHIBA |
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N CHANNEL NUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANC | |
2SK362_07 | TOSHIBA |
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Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and I | |
2SK3628 | KEXIN |
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Silicon N-channel Power MOSFET | |
2SK3628 | TYSEMI |
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High-speed switching Low ON resistance Ron No secondary breakdown |