2SK3605-01

更新时间： 2024-11-15 07:32:35

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	108K
描述
N-CHANNEL SILICON POWER MOSFET

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中文翻译

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数据手册

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2SK3605-01 数据手册

2SK3605-01

200304

N-CHANNEL SILICON POWER MOSFET

Outline Drawings (mm)

FUJI POWER MOSFET

Super FAP-G Series

Features

High speed switching

Low on-resistance

No secondary breadown

Low driving power

Avalanche-proof

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DCconverters

Maximum ratings and characteristic

Absolute maximum ratings

(Tc=25°C unless otherwise specified)

Foot Print Pattern

Item

Symbol

VDS

Ratings

150

Unit

Equivalent circuit schematic

Drain-source voltage

VDSX *5

ID Tc=25

Ta=25

ID(puls]

120

±23

D : Drain

°C

Continuous drain current

°C

3.1 **

Pulsed drain current

Gate-source voltage

±92

±30

G : Gate

VGS

Non-repetitive Avalanche current IAS *2

Maximum Avalanche Energy

Maximum Drain-Source dV/dt

Peak Diode Recovery dV/dt

Max. power dissipation

EAS *1

dVDS/dt *4

dV/dt *3

PD Tc=25

Ta=25

Tch

130.9

S1 : Source

kV/µs

S2 : Source

kV/µs

°C

105

2.4 **

Operating and storage

temperature range

** Surface mounted on 1000mm², t=1.6mm FR-4 PCB(Drain pad area : 500mm²)

+150

°C

Tstg

-55 to +150

*1 L=363µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch 150°C

*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C

*4 VDS 150V *5 VGS=-30V

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Symbol

V(BR)DSS

VGS(th)

Test Conditions

Item

ID= 250 A

VGS=0V

VDS=VGS

150

Drain-source breakdown voltaget

Gate threshold voltage

ID= 250 A

3.0

5.0

µA

Tch=25°C

VDS=150V VGS=0V

VDS=120V VGS=0V

VGS=±30V

VDS=0V

Zero gate voltage drain current

IDSS

Tch=125°C

250

100

105

IGSS

RDS(on)

gfs

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

ID=8A VGS=10V

mΩ

ID=8A VDS=25V

VDS=75V

Ciss

760

130

1140

195

Coss

Crss

td(on)

VGS=0V

Output capacitance

f=1MHz

VCC=48V ID=8A

Reverse transfer capacitance

Turn-on time ton

2.8

6.2

4.2

9.3

VGS=10V

td(off)

Turn-off time toff

RGS=10 Ω

31.5

13.5

VCC=75V

ID=16A

Total Gate Charge

QGS

QGD

IAV

Gate-Source Charge

Gate-Drain Charge

VGS=10V

L=363 H Tch=25°C

Avalanche capability

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

1.10

1.65

VSD

trr

Qrr

IF=16A VGS=0V Tch=25°C

IF=16A VGS=0V

-di/dt=100A/µs

Tch=25°C

0.13

0.59

µs

µC

Thermalcharacteristics

Item

Min.

Typ.

Max. Units

1.191 °C/W

Symbol

Rth(ch-c)

Test Conditions

channel to case

Thermal resistance

Rth(ch-a)

channel to ambient

°C/W

87.0

52.0

Rth(ch-a) **

** Surface mounted on 1000mm², t=1.6mm FR-4 PCB(Drain pad area : 500mm²)

12 3 4

中文翻译

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与2SK3605-01相关器件

型号	品牌	获取价格	描述	数据表
2SK3606-01	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3606-01_03	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3607-01MR	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3608	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3608-01L	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3608-01L_03	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3608-01S	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3608-01SJ	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3608-S	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3608-SJ	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET

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