5秒后页面跳转
2SK3605-01 PDF预览

2SK3605-01

更新时间: 2024-01-20 14:46:59
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
4页 108K
描述
N-CHANNEL SILICON POWER MOSFET

2SK3605-01 数据手册

 浏览型号2SK3605-01的Datasheet PDF文件第2页浏览型号2SK3605-01的Datasheet PDF文件第3页浏览型号2SK3605-01的Datasheet PDF文件第4页 
2SK3605-01  
200304  
N-CHANNEL SILICON POWER MOSFET  
Outline Drawings (mm)  
FUJI POWER MOSFET  
Super FAP-G Series  
Features  
High speed switching  
Low on-resistance  
No secondary breadown  
Low driving power  
Avalanche-proof  
Applications  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DCconverters  
Maximum ratings and characteristic  
Absolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Foot Print Pattern  
Item  
Symbol  
VDS  
Ratings  
150  
Unit  
Equivalent circuit schematic  
Drain-source voltage  
V
VDSX *5  
ID Tc=25  
Ta=25  
ID(puls]  
120  
±23  
V
D : Drain  
°C  
Continuous drain current  
A
°C  
3.1 **  
±
A
Pulsed drain current  
Gate-source voltage  
±92  
±30  
23  
A
G : Gate  
VGS  
V
Non-repetitive Avalanche current IAS *2  
A
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Max. power dissipation  
EAS *1  
dVDS/dt *4  
dV/dt *3  
PD Tc=25  
Ta=25  
Tch  
130.9  
20  
mJ  
S1 : Source  
kV/µs  
S2 : Source  
5
kV/µs  
W
°C  
°C  
105  
2.4 **  
Operating and storage  
temperature range  
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)  
+150  
°C  
°C  
Tstg  
-55 to +150  
<
*1 L=363µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch 150°C  
=
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C  
*4 VDS 150V *5 VGS=-30V  
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Symbol  
V(BR)DSS  
VGS(th)  
Test Conditions  
Item  
µ
ID= 250 A  
VGS=0V  
VDS=VGS  
V
150  
Drain-source breakdown voltaget  
Gate threshold voltage  
µ
ID= 250 A  
V
3.0  
5.0  
25  
µA  
Tch=25°C  
VDS=150V VGS=0V  
VDS=120V VGS=0V  
VGS=±30V  
VDS=0V  
Zero gate voltage drain current  
IDSS  
Tch=125°C  
250  
100  
105  
IGSS  
RDS(on)  
gfs  
nA  
10  
79  
Gate-source leakage current  
Drain-source on-state resistance  
Forward transcondutance  
Input capacitance  
ID=8A VGS=10V  
m  
S
6
12  
ID=8A VDS=25V  
VDS=75V  
Ciss  
760  
130  
6
1140  
195  
9
pF  
Coss  
Crss  
td(on)  
tr  
VGS=0V  
Output capacitance  
f=1MHz  
VCC=48V ID=8A  
Reverse transfer capacitance  
Turn-on time ton  
ns  
12  
18  
2.8  
22  
6.2  
4.2  
33  
9.3  
VGS=10V  
td(off)  
tf  
Turn-off time toff  
RGS=10 Ω  
21  
9
31.5  
13.5  
9
QG  
nC  
VCC=75V  
ID=16A  
Total Gate Charge  
QGS  
QGD  
IAV  
Gate-Source Charge  
Gate-Drain Charge  
6
VGS=10V  
23  
µ
A
L=363 H Tch=25°C  
Avalanche capability  
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
1.10  
1.65  
VSD  
trr  
Qrr  
V
IF=16A VGS=0V Tch=25°C  
IF=16A VGS=0V  
-di/dt=100A/µs  
Tch=25°C  
0.13  
0.59  
µs  
µC  
Thermalcharacteristics  
Item  
Min.  
Typ.  
Max. Units  
1.191 °C/W  
Symbol  
Rth(ch-c)  
Test Conditions  
channel to case  
Thermal resistance  
Rth(ch-a)  
channel to ambient  
channel to ambient  
°C/W  
°C/W  
87.0  
52.0  
Rth(ch-a) **  
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)  
1

与2SK3605-01相关器件

型号 品牌 获取价格 描述 数据表
2SK3606-01 FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3606-01_03 FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3607-01MR FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3608 FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3608-01L FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3608-01L_03 FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3608-01S FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3608-01SJ FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3608-S FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3608-SJ FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET