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2SK3608-01L_03 PDF预览

2SK3608-01L_03

更新时间: 2024-02-15 18:27:11
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富士电机 - FUJI /
页数 文件大小 规格书
4页 260K
描述
N-CHANNEL SILICON POWER MOSFET

2SK3608-01L_03 数据手册

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2SK3608-01L,S,SJ  
FUJI POWER MOSFET  
Super FAP-G Series  
Features  
200304  
N-CHANNEL SILICON POWER MOSFET  
Outline Drawings (mm)  
High speed switching  
Low on-resistance  
No secondary breadown  
Low driving power  
Avalanche-proof  
P4  
Applications  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DCconverters  
Maximum ratings and characteristicAbsolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Item  
Symbol  
VDS  
Ratings  
200  
Unit  
V
Drain-source voltage  
V
VDSX *5  
ID  
170  
±18  
±72  
±30  
18  
Equivalent circuit schematic  
A
Continuous drain current  
Pulsed drain current  
Gate-source voltage  
A
ID(puls]  
VGS  
V
Drain(D)  
A
Non-repetitive Avalanche current IAS *2  
mJ  
kV/µs  
kV/µs  
W
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Max. power dissipation  
EAS *1  
dVDS/dt *4  
dV/dt *3  
PD Ta=25  
Tc=25  
Tch  
125.5  
20  
5
Gate(G)  
°C  
°C  
1.67  
Source(S)  
105  
+150  
-55 to +150  
Operating and storage  
temperature range  
°C  
°C  
Tstg  
<
*1 L=620µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch 150°C  
=
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C  
*5 VGS=-30V  
*4 VDS 200V  
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Symbol  
V(BR)DSS  
VGS(th)  
Test Conditions  
Item  
µ
ID= 250 A  
VGS=0V  
V
200  
Drain-source breakdown voltaget  
Gate threshold voltage  
µ
ID= 250 A  
VDS=VGS  
V
3.0  
5.0  
25  
Tch=25°C  
µA  
VDS=200V VGS=0V  
Zero gate voltage drain current  
IDSS  
Tch=125°C  
250  
100  
170  
VDS=160V VGS=0V  
VGS=±30V VDS=0V  
IGSS  
RDS(on)  
gfs  
nA  
10  
131  
11  
Gate-source leakage current  
Drain-source on-state resistance  
Forward transcondutance  
Input capacitance  
ID=6.5A VGS=10V  
m  
S
5.5  
ID=6.5A VDS=25V  
VDS=75V  
Ciss  
Coss  
Crss  
td(on)  
tr  
770  
110  
5
1155  
165  
pF  
VGS=0V  
Output capacitance  
7.5  
18  
3.9  
33  
9.2  
f=1MHz  
Reverse transfer capacitance  
Turn-on time ton  
ns  
VCC=48V ID=6.5A  
12  
2.6  
22  
6.1  
VGS=10V  
td(off)  
tf  
Turn-off time toff  
RGS=10 Ω  
21  
8
31.5  
12  
QG  
VCC=100V  
ID=13A  
nC  
Total Gate Charge  
QGS  
QGD  
IAV  
Gate-Source Charge  
Gate-Drain Charge  
5
7.5  
VGS=10V  
µ
18  
L=620 H Tch=25°C  
A
Avalanche capability  
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
1.10  
1.65  
VSD  
IF=13A VGS=0V Tch=25°C  
IF=13A VGS=0V  
-di/dt=100A/µs  
V
0.15  
0.88  
trr  
Qrr  
µs  
µC  
Tch=25°C  
Thermalcharacteristics  
Item  
Symbol  
Test Conditions  
Min.  
Typ.  
Max. Units  
Rth(ch-c)  
channel to case  
1.191  
°C/W  
Thermal resistance  
Rth(ch-a)  
channel to ambient  
75.0  
°C/W  
www.fujielectric.co.jp/denshi/scd  
1

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