生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.7 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 125.5 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 13 A |
最大漏极电流 (ID): | 18 A | 最大漏源导通电阻: | 0.17 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 50 W | 最大脉冲漏极电流 (IDM): | 72 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3608-S | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3608-SJ | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3609-01 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK360D | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-346 | |
2SK360-D | HITACHI |
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暂无描述 | |
2SK360E | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-346 | |
2SK360F | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-346 | |
2SK360-F | RENESAS |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET | |
2SK360IGDUR | HITACHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK360IGDUR | RENESAS |
获取价格 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-3 |