2SK3523-01R
200304
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
TO-3PF
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
500
Unit
V
Drain-source voltage
VDSX *5
ID
500
±25
±100
±30
25
V
Equivalent circuit schematic
Continuous drain current
Pulsed drain current
A
ID(puls]
VGS
A
Gate-source voltage
V
Drain(D)
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR
*2
*1
A
EAS
336.5
20
mJ
kV/µs
kV/µs
W
dVDS/dt *4
dV/dt
*3
5
Gate(G)
°C
°C
PD Ta=25
Tc=25
Tch
3.125
Source(S)
160
Operating and storage
temperature range
Isolation Voltage
+150
°C
Tstg
-55 to +150
°C
VISO *6
2
<
kVrms
*1 L=987µH, Vcc=50V, See to Avalanche Energy Graph *2 Tch 150°C
=
<
<
<
<
*4 VDS 500V *5 VGS=-30V *6 t=60sec f=60Hz
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Test Conditions
Item
µ
ID= 250 A
VGS=0V
VDS=VGS
V
Drain-source breakdown voltaget
Gate threshold voltage
500
µ
ID= 250 A
V
3.0
5.0
25
Tch=25°C
µA
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
VDS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
IGSS
RDS(on)
gfs
10
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=10.5A VGS=10V
0.20
0.26
Ω
11
22
2280
320
16
S
ID=10.5A VDS=25V
VDS=25V
Ciss
3420
480
24
pF
Coss
Crss
td(on)
tr
VGS=0V
Output capacitance
f=1MHz
Reverse transfer capacitance
Turn-on time ton
ns
VCC=300V ID=10.5A
VGS=10V
27
41
37
56
75
113
17
td(off)
tf
Turn-off time toff
RGS=10 Ω
11
54
81
QG
VCC=300V
ID=21A
nC
Total Gate Charge
16
24
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
20
30
VGS=10V
25
µ
L=987 H Tch=25°C
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
0.98
1.50
VSD
trr
Qrr
IF=21A VGS=0V Tch=25°C
IF=21A VGS=0V
-di/dt=100A/µs
V
0.7
µs
µC
10.0
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.781
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
40.0
°C/W
1