2SK3532-01MR
200304
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
TO-220F
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
900
Unit
V
Drain-source voltage
V
VDSX *5
ID
900
±6
Equivalent circuit schematic
A
Continuous drain current
Pulsed drain current
A
ID(puls]
VGS
±24
±30
6
V
Gate-source voltage
Drain(D)
A
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR
*2
*1
mJ
kV/µs
kV/µs
W
EAS
244
40
dVDS/dt *4
dV/dt
*3
5
Gate(G)
°C
°C
PD Ta=25
Tc=25
Tch
2.16
Source(S)
70
+150
Operating and storage
temperature range
Isolation Voltage
°C
-55 to +150
2
Tstg
°C
VISO
*6
kVrms
<
*1 L=12.4mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch 150°C
=
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
*4 VDS 900V *5 VGS=-30V *6 t=60sec, f=60Hz
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
Drain-source breakdown voltaget
Gate threshold voltage
900
V
µ
ID= 250 A
VGS=0V
3.0
5.0
25
V
µ
ID= 250 A
VDS=VGS
µA
VDS=900V VGS=0V
Tch=25°C
Zero gate voltage drain current
IDSS
250
100
VDS=720V VGS=0V
VGS=±30V
VDS=0V
ID=3A VGS=10V
Tch=125°C
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
1.92
7.4
750
2.50
Ω
3.7
S
ID=3A VDS=25V
Ciss
1125
150
11
pF
VDS=25V
VGS=0V
Coss
Crss
td(on)
tr
100
7
Output capacitance
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=600V ID=3A
ns
21
8
32
12
VGS=10V
42
11
63
td(off)
tf
Turn-off time toff
RGS=10 Ω
16.5
32
4.5
10.5
21.5
QG
nC
Total Gate Charge
VCC=450V
ID=6A
3
7
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
VGS=10V
6
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=12.4mH Tch=25°C
0.90
1.1
1.50
VSD
trr
Qrr
V
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/µs
µs
µC
5.5
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
1.560
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
1