2SK3533-01
200304
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
TO-220AB
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
VDS
Ratings
Unit
V
900
900
±7
VDSX *5
ID
V
A
Equivalent circuit schematic
Continuous drain current
Pulsed drain current
ID(puls]
VGS
IAR
±28
±30
7
A
Drain(D)
Gate-source voltage
V
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
*2
*1
A
EAS
269.5
40
mJ
dVDS/dt *4
dV/dt
kV/µs
Gate(G)
*3
5
kV/µs
W
°C
°C
PD Ta=25
Tc=25
Tch
2.02
225
Source(S)
Operating and storage
temperature range
+150
°C
°C
-55 to +150
Tstg
<
*1 L=10.1mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch 150°C
=
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
*4 VDS 900V *5 VGS=-30V
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
µ
Drain-source breakdown voltaget
Gate threshold voltage
900
V
ID= 250 A
VGS=0V
VDS=VGS
µ
3.0
5.0
25
V
ID= 250 A
µA
Tch=25°C
VDS=900V VGS=0V
Zero gate voltage drain current
IDSS
250
100
Tch=125°C
VDS=720V VGS=0V
VGS=±30V
VDS=0V
ID=3.5A VGS=10V
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
1.54
8.2
920
115
6.6
2.00
Ω
4.1
S
ID=3.5A VDS=25V
Ciss
1380
175
10
pF
VDS=25V
Coss
Crss
td(on)
tr
Output capacitance
VGS=0V
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=600V ID=3.5A
ns
22
8
33
12
VGS=10V
45
10.5
25
4
67.5
td(off)
tf
Turn-off time toff
RGS=10 Ω
16
37.5
6
QG
nC
Total Gate Charge
VCC=450V
ID=7A
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
8.5
13
VGS=10V
7
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=10.1mH Tch=25°C
0.90
1.50
VSD
trr
Qrr
V
IF=7A VGS=0V Tch=25°C
IF=7A VGS=0V
-di/dt=100A/µs
Tch=25°C
2.6
8.0
µs
µC
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.560
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
62.0
°C/W
1