5秒后页面跳转
2SK3530 PDF预览

2SK3530

更新时间: 2024-09-13 22:52:59
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
1页 33K
描述
Fuji Power MOSFET SuperFAP-G series Target Specification

2SK3530 数据手册

  
Fuji PowerMOSFET SuperFAP-G series Target Specification  
PRELIMINARY  
2SK3530-01MR (800V/1.9/7A)  
1) Package  
TO-220F  
2) Absolute Maximum Ratings (Tc=25unless otherwise specified)  
Symbols  
Ratings  
Items  
Units  
VDS  
ID  
800  
Drain-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
V
A
A
V
±7  
ID(pulse)  
VGS  
±28  
±30  
Gate-Source Voltage  
Repetitive and Non-Repetitive  
Maximum Avalanche Current  
Non-Repetitive  
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
IAR  
7
A
EAS  
235.3  
mJ  
*1  
*2  
20  
5
70  
dVDS/dt  
dV/dt  
PDc=25℃  
PD @Ta=25℃  
Tch  
kV/us  
kV/us  
W
Peak Diode recovery dV/dt  
Maximum Power Dissipation  
2.16  
W
150  
Operating and Storage  
Temperature range  
Tstg  
-55 +150  
3)Electrical Characteristics (Tch=25unless otherwise specified)  
Items  
Symbols  
BVDSS  
Test Conditions  
min.  
800  
3.0  
---  
typ.  
---  
max. Units  
ID=250uA  
VGS=0V  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
---  
5.0  
50  
V
V
VGS(th)  
ID=250uA  
VDS=800V  
VGS=0V  
VDS=VGS  
Tch=25℃  
Tch=125℃  
VDS=0V  
---  
---  
μA  
μA  
nA  
IDSS  
Zero Gate Voltage Drain Current  
---  
---  
500  
100  
IGSS  
VGS=±30V  
Gate-Source Leakage Current  
---  
---  
R (on)  
DS  
ID=3.5A  
Drain-Source On-State Resistance  
VGS=10V  
---  
---  
1.9  
Ω
Ciss  
Coss  
Crss  
Qg  
Qgs  
Qgd  
IAV  
VDS=25V  
VGS=0V  
Input Capacitance  
---  
---  
---  
---  
---  
---  
7
830  
100  
5
25  
7.5  
7
---  
---  
---  
---  
---  
---  
---  
Output Capacitance  
pF  
Reverse Transfer Capacitance  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain (Miller) Charge  
Avalanche Capability  
f=1MHz  
Vcc=400V  
ID=7A  
nC  
VGS=10V  
L=8.80mH  
Tch=25℃  
---  
A
V
VSD  
IF=7A,VGS=0V,Tch=25℃  
Diode Forward On-Voltage  
---  
1.0  
1.5  
4) Thermal Characteristics  
Items  
Channel to Case  
Channel to Ambient  
Symbols  
Rth(ch-c)  
Rth(ch-a)  
Test Conditions  
min.  
typ.  
max. Units  
1.79  
58.0  
/W  
/W  
*1 L=8.80mH,Vcc=80V  
*2 I -I ,-di/dt=50A/ s,Vcc BV ,Tch 150 C  
µ
°
F
D
DSS  
NAME  
APPROVED  
DATE  
Sep.-09-'02  
Fuji Electric Co.,Ltd.  
DRAWN  
a
CHECKED Sep.-09-'02  
MT5F12296 1/1  
REVISIONS  
MA4LE  

与2SK3530相关器件

型号 品牌 获取价格 描述 数据表
2SK3530-01MR FUJI

获取价格

Fuji Power MOSFET SuperFAP-G series Target Specification
2SK3530-01MR_03 FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3531-01 FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3532 FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3532-01MR FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3533-01 FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3534-01MR FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3535-01 FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET
2SK3536 ISAHAYA

获取价格

ELECTRET CONDENSER MICROPHONE APPLICATION N CHANNEL JUNCTION TYPE
2SK3537-01MR FUJI

获取价格

N-CHANNEL SILICON POWER MOSFET