生命周期: | Active | 零件包装代码: | TO-3PF |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.74 | 雪崩能效等级(Eas): | 333.8 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (ID): | 21 A |
最大漏源导通电阻: | 0.37 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 84 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3528-01R_03 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3529-01 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3530 | FUJI |
获取价格 |
Fuji Power MOSFET SuperFAP-G series Target Specification | |
2SK3530-01MR | FUJI |
获取价格 |
Fuji Power MOSFET SuperFAP-G series Target Specification | |
2SK3530-01MR_03 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3531-01 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3532 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3532-01MR | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3533-01 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3534-01MR | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |