Datasheet > 2SK3541T2L

2SK3541T2L

更新时间： 2024-09-15 12:52:07

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管开关光电二极管驱动
页数	文件大小	规格书
4页	88K
描述
2.5V Drive Nch MOSFET

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2SK3541T2L 数据手册

2SK3541

Transistor

2.5V Drive Nch MOS FET

2SK3541

zExternal dimensions (Unit : mm)

zStructure

Silicon N-channel

MOSFET

VMT3

1.2

0.32

(3)

zApplications

( )( )

1 2

Interfacing, switching (30V, 100mA)

0.22

0.13

0.4 0.4

0.5

0.8

(1)Gate

zFeatures

1) Low on-resistance.

(2)Source

(3)Drain

Abbreviated symbol : KN

2) Fast switching speed.

3) Low voltage drive (2.5V) makes this device ideal for

portable equipment.

4) Drive circuits can be simple.

5) Parallel use is easy.

zPackaging specifications

zEquivalent circuit

Package

Code

Taping

T2L

Drain

Type

Basic ordering unit

(pieces)

8000

2SK3541

Gate

zAbsolute maximum ratings (Ta=25°C)

∗ Gate

Protection

Diode

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Limits

Unit

Source

VDSS

GSS

∗A protection diode is included between the gate

and the source terminals to protect the diode

against static electricity when the product is in use.

Use a protection circuit when the fixed voltages

are exceeded.

Continuous

Pulsed

100

°C

Drain current

∗

400

∗

150

Total power dissipation

Channel temperature

Tch

150

Tstg

−55 to +150

°C

Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 With each pin mounted on the recommended lands.

Rev.B

1/3

12 3 4

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