2SK3530-01MR
200304
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
TO-220F
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
800
Unit
V
Drain-source voltage
V
VDSX *5
ID
800
±7
Equivalent circuit schematic
A
Continuous drain current
Pulsed drain current
A
ID(puls]
VGS
±28
±30
7
V
Gate-source voltage
Drain(D)
A
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR
*2
*1
mJ
kV/µs
kV/µs
W
EAS
235.3
40
dVDS/dt *4
dV/dt
*3
5
Gate(G)
°C
°C
PD Ta=25
Tc=25
Tch
2.16
Source(S)
70
+150
Operating and storage
temperature range
Isolation Voltage
°C
-55 to +150
2
Tstg
°C
VISO
*6
kVrms
<
*1 L=8.8mH, Vcc=80V, Tch=25°C See to Avalanche Energy Graph *2 Tch 150°C
=
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
*4 VDS 800V *5 VGS=-30V *6 t=60sec, f=60Hz
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
µ
Drain-source breakdown voltaget
Gate threshold voltage
800
V
ID= 250 A
VGS=0V
VDS=VGS
µ
3.0
5.0
25
V
ID= 250 A
µA
Tch=25°C
VDS=800V VGS=0V
Zero gate voltage drain current
IDSS
250
100
Tch=125°C
VDS=640V VGS=0V
VGS=±30V
VDS=0V
ID=3.5A VGS=10V
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
1.46
8.2
740
1.90
Ω
4.1
S
ID=3.5A VDS=25V
Ciss
1110
160
pF
VDS=25V
Coss
Crss
td(on)
tr
105
7
Output capacitance
VGS=0V
10.5
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=600V ID=3.5A
ns
21
8
31.5
12
VGS=10V
40
60
td(off)
tf
Turn-off time toff
RGS=10 Ω
9.6
14.4
32
21.5
3
QG
nC
Total Gate Charge
VCC=400V
ID=7A
4.5
10.5
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
7
VGS=10V
7
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=8.8mH Tch=25°C
0.90
1.50
VSD
trr
Qrr
V
IF=7A VGS=0V Tch=25°C
IF=7A VGS=0V
-di/dt=100A/µs
Tch=25°C
2.3
7.0
µs
µC
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
1.790
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
1