Datasheet > 2SK3536

2SK3536

更新时间： 2024-09-13 21:53:27

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
3页	60K
描述
ELECTRET CONDENSER MICROPHONE APPLICATION N CHANNEL JUNCTION TYPE

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中文翻译

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数据手册

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2SK3536 数据手册

〈FIELD-EFFECT TRANSISTO R〉

2SK3536

ELECTRET CO NDENSER M ICRO PHO NE APPLICATIO N

N CHANNEL JUNCTIO N TYPE

DESCRIPTIO N

O UTLINE DRAW ING

2SK3536 isa superm inipackage resin sealed silicon

N channeljunction type FET.

U nit:mm

Since excellenttransientcharacteristics,high｜Ｙfs｜

and a super-thin flatlead type package,itisthe optim um

asan electretcondenserm icrophone use.

0.2

0.8

FEATURE

・Super-thin flatlead type package.

t=0.45m m

・High ｜Ｙｆｓ｜

・Excellenttransientcharacteristics

APPLICATIO N

Electretcondenserm icrophone application

TERM INAL CO NNECTO R

:DRAIN

:SO URCE

:G ATE

M AXIM UM RATING S(Ta=25℃)

JEITA :

Param eter

Sym bol

Unit

Ratings

Drain to Source Voltage

G ate to Drain Voltage

Drain Current

VDSX

VG DO

-20

m A

m W

℃

G ate Current

Totalallowable dissipation(Ta=25℃)

Channeltem perature

Storage tem perature

+125

Tch

Tstg

-55～+125

ELECTRICAL CHARACTERISTICS(Ta=25℃)

Lim its

Sym bol

Param eter

Testconditions

Unit

Typ

M ax

600

M in

IDSS

VG S(O FF)

｜Yfs｜

Ciss

μA

Drain current

Cutoffvoltage

VDS=5V, VG S=0V

VDS=5V, ID=1.0μA

-0.1

350

-1.0

μS

Forward transferadm ittanceVDS=5V, VG S=0V, f=1KHz

7.0

1.8

Inputcapacitance

VDS=5V, VG S=0V, f=1M Hz

Noise voltage

3.0

μV

ISAHAYAꢀELECTRONICSꢀCORPORATION

12 3

中文翻译

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