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2SK3235

更新时间： 2024-10-13 23:20:39

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2SK3235 数据手册

2SK3235

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-1371 (Z)

1st. Edition

Mar. 2001

Features

•

Low on-resistance: R_DS(on)= 0.3 Ω typ.

Low leakage current: IDSS = 1 µA max (at VDS = 500 V)

High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A)

Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A)

Avalanche ratings

Outline

TO-3P

1. Gate

2. Drain (Flange)

3. Source

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
2SK3235-E	RENESAS	获取价格	15A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN
2SK3236	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
2SK3236_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications, DC-DC Converter and Motor Dri
2SK3236_09	TOSHIBA	获取价格	Switching Regulator Applications, DC-DC Converter and
2SK3239L-E	RENESAS	获取价格	Silicon N Channel MOS FET
2SK3239STL-E	RENESAS	获取价格	Silicon N Channel MOS FET
2SK323-D	HITACHI	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction
2SK323-E	HITACHI	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction
2SK324	ETC	获取价格	2SK324
2SK325	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 10A I(D) \| TO-3