Datasheet > 2SK3269-ZJ

2SK3269-ZJ

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	941K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2SK3269-ZJ 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2SK3269-ZJ

■ Features

● VDS (V) = 100V

● ID = 25 A (VGS = 10V)

● R^DS(ON)＜ 100mΩ (VGS = 10V)

● Low on-resistance, Low Qg

● High avalanche resistance

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

100

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current

Pulsed Drain Current

100

Tc = 25℃

Power Dissipation

1.4

Ta = 25℃

Single Avalanche Energy

(Note.1)

22.5

89.3

3.125

150

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

thJA

thJC

℃/W

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Input Capacitance

Symbol

Test Conditions

Min

Typ

Max Unit

DSS

=1mA, VGS=0V

100

DSS

GSS

DS=80V, VGS=0V

DS=0V, VGS=±20V

±1

GS(th)

DS(O

iss

oss

rss

d(on)

DS=10V , I

D=1mA

GS=10V, I

D=12A

100

mΩ

D=12A

960

285

^GS=0V, V^DS=10V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On DelayTime

Turn-On Rise Time

GS=10V, VDS=30V, ID=12A,RG=2.5Ω

Turn-Off DelayTime

d(off)

Turn-Off Fall Time

Diode Forward Voltage

=15A,VGS=0V

1.4

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