Datasheet > 2SK3269

2SK3269

更新时间： 2024-11-17 06:23:27

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关脉冲
页数	文件大小	规格书
1页	45K
描述
N-Channel Enhacement Mode MOSFET

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中文翻译

获取价格

数据手册

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2SK3269 数据手册

SMD Type

MOSFET

N-Channel Enhacement Mode MOSFET

2SK3269

TO-263

Unit: mm

+0.2

-0.2

Features

4.57

+0.1

1.27

-0.1

4.5 V drive available

Low on-state resistance

R^DS(on)1= 12 m MAX. (VGS = 10 V, ID = 18 A)

Low gate charge

+0.1

-0.1

0.1max

1.27

+0.1

0.81

-0.1

QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)

Built-in gate protection diode

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Surface mount device available

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

100

Gate to source voltage

140

Drain current

I^dp*

1.5

Power dissipation

T^a=25

T^c=25

P^D

Channel temperature

Storage temperature

T^ch

150

Tstg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Symbol

V^DSS

I^DSS

Testconditons

ID=1mA,VGS=0

Min

Typ

Max

Unit

Drain source surrender voltage

Drain cut-off current

100

VDS=20V,VGS=0

VGS= 20V,VDS=0

VDS=10V,ID=1mA

VDS=10V,ID=12A

V^GS=10V,ID=18A

VGS=4.5V,ID=18A

Gate leakage current

Gat cutoff voltage

I^GSS

V^GS(off)

1.0

9.0

2.5

Forward transfer admittance

Yfs

8.5

Drain to source on-state resistance

R^DS(on)

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Ciss

C^oss

C^rss

t^on

t^r

1300

570

300

V^DS=10V,VGS=0,f=1MHZ

1220

100

180

I^D=18A,VGS(on)=10V,RG=10

,VDD=10V

Turn-off delay time

Fall time

t^off

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