2SK3271-01S

更新时间： 2024-11-18 13:04:27

品牌	Logo	应用领域
富士电机 - FUJI		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
2页	259K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SK3271-01S 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

2SK3271-01S 数据手册

N-channel MOS-FET

2SK3271-01

6,5mW

±100A 155W

Trench Gate MOSFET

60V

> Features

> Outline Drawing

- High Current

- Low On-Resistance

- No Secondary Breakdown

- Low Driving Power

- Avalanche Rated

> Applications

- Motor Control

- General Purpose Power Amplifier

DC-DC converters

> Maximum Ratings and Characteristics

> Equivalent Circuit

- Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item

Symbol

Rating

Unit

Drain-Source-Voltage

Continous Drain Current

Pulsed Drain Current

±100

±400

D(puls)

Gate-Source-Voltage

V^GS

+30 /-20

490.4

Maximum Avalanche Energy

Max. Power Dissipation

Operating and Storage Temperature Range

mJ*

155

150

°C

-55 ~ +150

* L=0,65.4uH, V_CC=24V

stg

Electrical Characteristics (T_C=25°C), unless otherwise specified

Item

Symbol

Test conditions

Min.

Typ.

Max.

Unit

I_D=1mA

V_GS=0V

Drain-Source Breakdown-Voltage

Gate Threshhold Voltage

Zero Gate Voltage Drain Current

DSS

I_D=10mA

V_DS=60V

V_DS=V_GS

T_ch=25°C

T_ch=125°C

V_DS=0V

2,5

3,0

1,0

3,5

GS(th)

DSS

100,0

µA

_GS=0V

10,0 500,0

V_GS=±30V

I_D=40A

Gate Source Leakage Current

100

6,5

GSS

V_GS=40V

Drain Source On-State Resistance

5,0

DS(on)

I_D=40A

V_DS=10V

Forward Transconductance

Input Capacitance

9000

1250

700

V_DS=25V

iss

oss

rss

d(on)

V_GS=0V

f=1MHz

V_CC=30V

VGS=10V

ID=80A

Output Capacitance

Reverse Transfer Capacitance

Turn-On-Time t_on(t_on=t_d(on)+t_r)

200

150

135

Turn-Off-Time t_off(t_on=t_d(off)+t_f)

d(off)

R_GS=10 W

T_ch=25°C

Avalanche Capability

L = 100µH

100

I_F=80A V_GS=0V T_ch=25°C

I_F=50A V_GS=0V

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

1,0

1,5

µC

-dI_F/dt=100A/µs T_ch=25°C

0,25

Thermal Characteristics

Item

Symbol

Test conditions

channel to ambient

channel to case

Min.

Typ.

Max.

Unit

Thermal Resistance

35,0 °C/W

th(ch-a)

th(ch-c)

0,806 °C/W

中文翻译

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