生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.71 |
Is Samacsys: | N | 其他特性: | CASCODE MOS |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 0.03 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 0.05 pF | 最高频带: | VERY HIGH FREQUENCY BAND |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK303 | TYSEMI |
获取价格 |
Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supp |
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2SK303 | SANYO |
获取价格 |
Low-Frequency General-Purpose Amp Applications |
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2SK303 | KEXIN |
获取价格 |
N-Channel Junction Silicon FET |
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2SK303 | UTC |
获取价格 |
Low-Frequency General-Purpose Amplifier Applications |
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2SK303_10 | UTC |
获取价格 |
LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS |
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2SK303_11 | UTC |
获取价格 |
LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS |
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2SK303_15 | UTC |
获取价格 |
LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS |
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2SK3030 | PANASONIC |
获取价格 |
Silicon N-Channel Power F-MOS FET |
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2SK3030(TENTATIVE) | PANASONIC |
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Silicon N-Channel Power F-MOS FET |
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2SK3031 | PANASONIC |
获取价格 |
Silicon N-Channel Power F-MOS FET |
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