2SK3035(TENTATIVE)

更新时间： 2024-02-04 09:08:49

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
1页	26K
描述
Silicon N-Channel Power F-MOS FET

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中文翻译

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数据手册

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2SK3035(TENTATIVE) 数据手册

Power F-MOS FETs

2SK3035 (Tentative)

Silicon N-Channel Power F-MOS FET

■ Features

● Avalanche energy capacity guaranteed

● High-speed switching

● Low ON-resistance

unit: mm

● No secondary breakdown

● Low-voltage drive

● High electrostatic breakdown voltage

6.5±0.1

5.3±0.1

4.35±0.1

2.3±0.1

0.5±0.1

■ Applications

● Contactless relay

● Diving circuit for a solenoid

● Driving circuit for a motor

● Control equipment

1.0±0.1

0.1±0.05

0.93±0.1

0.5±0.1

● Switching power supply

0.75±0.1

■ Absolute Maximum Ratings (T_C= 25°C)

2.3±0.1

4.6±0.1

Parameter

Symbol

Ratings

Unit

Drain to Source breakdown voltage V_DSS

150

Gate to Source voltage

Pulse

Avalanche energy capacity

V_GSS

I_D

±20

1: Gate

2: Drain

3: Source

±3

Drain current

I_DP

±6

U Type Package

EAS^*

0.45

Internal Connection

Allowable power

dissipation

T_C= 25°C

Ta = 25°C

P_D

Channel temperature

Storage temperature

T_ch

150

°C

T_stg

−55 to +150

L = 0.1mH, I_L= 3A, 1 pulse

■ Electrical Characteristics (T_C= 25°C)

Parameter

Symbol

Conditions

V_DS= 120V, V_GS= 0

V_GS= ±20V, V_DS= 0

min

typ

max

Unit

µA

Drain to Source cut-off current

Gate to Source leakage current

I_DSS

I_GSS

±10

Drain to Source breakdown voltage V_DSS

_D= 1mA, V_GS= 0

V_DS= 10V, I_D= 1mA

R_DS(on)1V_GS= 10V, I_D= 2A

150

Gate threshold voltage

V_th

2.5

1.1

1.3

0.52

0.6

mΩ

Drain to Source ON-resistance

R_DS(on)2

| Y_fs|

V_GS= 4V, I_D= 2A

Forward transfer admittance

Diode forward voltage

V_DS= 10V, I_D= 2A

I_DR= 3A, V_GS= 0

1.5

2.7

V_DSF

−1.4

Input capacitance (Common Source) C_iss

Output capacitance (Common Source) C_oss

Reverse transfer capacitance (Common Source) C_rss

190

V_DS= 10V, V_GS= 0, f = 1MHz

Turn-on time (delay time)

Rise time

t_d(on)

t_r

V_DD= 100V, I_D= 2A

Fall time

t_f

V_GS= 10V, R_L= 50Ω

135

540

Turn-off time (delay time)

Thermal resistance between channel and case

Thermal resistance between channel and atmosphere

t_d(off)

R_th(ch-c)

R_th(ch-a)

12.5

125

°C/W

中文翻译

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与2SK3035(TENTATIVE)相关器件

型号	品牌	获取价格	描述	数据表
2SK3036	PANASONIC	获取价格	Silicon N-Channel Power F-MOS FET
2SK3037	PANASONIC	获取价格	Silicon N-Channel Power F-MOS FET
2SK3037(TENTATIVE)	PANASONIC	获取价格	Silicon N-Channel Power F-MOS FET
2SK303G-V2-AE3-R	UTC	获取价格	Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junc
2SK303G-V2-AQ3-R	UTC	获取价格	Small Signal Field-Effect Transistor,
2SK303G-V3-AE3-R	UTC	获取价格	Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junc
2SK303G-V4-T92-R	UTC	获取价格	Small Signal Field-Effect Transistor, N-Channel, Junction FET
2SK303G-X-AE3-R	UTC	获取价格	LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS
2SK303G-X-T92-B	UTC	获取价格	LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS
2SK303G-X-T92-K	UTC	获取价格	LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS

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