是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.57 |
配置: | SINGLE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 0.02 A | FET 技术: | JUNCTION |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.2 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK303G-V2-AQ3-R | UTC |
获取价格 |
Small Signal Field-Effect Transistor, | |
2SK303G-V3-AE3-R | UTC |
获取价格 |
Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junc | |
2SK303G-V4-T92-R | UTC |
获取价格 |
Small Signal Field-Effect Transistor, N-Channel, Junction FET | |
2SK303G-X-AE3-R | UTC |
获取价格 |
LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS | |
2SK303G-X-T92-B | UTC |
获取价格 |
LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS | |
2SK303G-X-T92-K | UTC |
获取价格 |
LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS | |
2SK303G-X-T92-R | UTC |
获取价格 |
LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS | |
2SK303G-XX-A3C-R | UTC |
获取价格 |
LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS | |
2SK303G-XX-AE3-R | UTC |
获取价格 |
LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS | |
2SK303G-XX-AQ3-R | UTC |
获取价格 |
LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS |