SMD Type
MOSFET
N-Channel Enhancement MOSFET
ꢀ6.ꢁꢂꢃꢂ.
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
Features
+0.1
-0.1
3
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
D rain
1
2
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
Low Input/Output Leakage
ƽ ESD Protected ±KV HBM
Gate
1.Base
1 GATE
2.Emitter
2 SOURCE
Gate
Protection
Diode
Source
3 DRAIN
Absolute Maximum Ratings Ta=±5
Parameter
Symbol
VDS
Rating
Unit
V
Drain-Source Voltage
60
±±0
Gate-Source Voltage -Continuous
VGS
Drain Current
-Continuous ( Note:1)
-Pulsed
300
ID
mA
800
Power Dissipation
(Note 1)
PD
RthJA
TJ
350
mW
Thermal Resistance.Junction- to-Ambient
Junction Temperature
357
ć/W
150
ć
Junction and Storage Temperature Range
Tstg
-55 to 150
Device mounted on FR-4 PCB.
Notes: 1.
Electrical Characteristics Ta = ±5
Parameter
Symbol
Test Conditions
Min
60
Typ
1.6
Max
Unit
V
Drain-Source Breakdown Voltage (Note.±)
Zero Gate Voltage Drain Current (Note.±)
V
DSS
DSS
GSS
GS(th)
I
D
=100A, VGS=0V
DS=60V, VGS=0V
DS=0V, VGS=±±0V
I
V
V
1
10
±.5
±
A
uA
V
Gate-Body Leakage Current
Gate Threshold Voltage
(Note.±)
(Note.±)
I
V
1
VDS = 10V, ID = 1mA
V
V
V
GS=10V, I
GS=10V, I
GS=10V, I
D
D
D
=500mA
Static Drain-Source On-Resistance (Note.±)
RDS(On)
¡
=50mA
3
Forward Transfer Admittance
Input Capacitance
(Note.±)
| Yfs |
iss
=±00mA
80
ms
C
50
±5
5
V
V
GS=0V, VDS=±5V, f=1MHz
pF
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Qg
GS=4.5V, VDS=15V, I
=±00mA, VDS=30V,
D=±00mA
0.8
±0
40
nC
ns
Turn-On DelayTime
t
d(on)
d(off)
I
R
D
G=10ȍ,VGEN=10V,RL=150ȍ
Turn-Off DelayTime
t
Note: ±.
Short duration test pulse used to minimize self-heating effect.
Marking
Marking
K7±
1
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